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Optimization of p-GaN/InGaN/n-GaN Double Heterojunction p-i-n Solar Cell for High Efficiency: Simulation Approach

DSpace at IIT Bombay

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Title Optimization of p-GaN/InGaN/n-GaN Double Heterojunction p-i-n Solar Cell for High Efficiency: Simulation Approach
 
Creator KUSHWAHA, AS
MAHALA, P
DHANAVANTRI, C
 
Subject DEPENDENCE
ALLOYS
 
Description We have conducted numerical simulation of p-GaN/In0.12Ga0.88N/n-GaN, p-i-n double heterojunction solar cell. The doping density, individual layer thickness, and contact pattern of the device are investigated under solar irradiance of AM1.5 for optimized performance of solar cell. The optimized solar cell characteristic parameters for cell area of 1 x 1 mm(2) are open circuit voltage of 2.26 V, short circuit current density of 3.31 mA/cm(2), fill factor of 84.6%, and efficiency of 6.43% with interdigitated grid pattern.
 
Publisher HINDAWI PUBLISHING CORPORATION
 
Date 2014-12-28T14:50:22Z
2014-12-28T14:50:22Z
2014
 
Type Article
 
Identifier INTERNATIONAL JOURNAL OF PHOTOENERGY,
1110-662X
1687-529X
http://dx.doi.org/10.1155/2014/819637
http://dspace.library.iitb.ac.in/jspui/handle/100/16797
 
Language English