Optimization of p-GaN/InGaN/n-GaN Double Heterojunction p-i-n Solar Cell for High Efficiency: Simulation Approach
DSpace at IIT Bombay
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Title |
Optimization of p-GaN/InGaN/n-GaN Double Heterojunction p-i-n Solar Cell for High Efficiency: Simulation Approach
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Creator |
KUSHWAHA, AS
MAHALA, P DHANAVANTRI, C |
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Subject |
DEPENDENCE
ALLOYS |
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Description |
We have conducted numerical simulation of p-GaN/In0.12Ga0.88N/n-GaN, p-i-n double heterojunction solar cell. The doping density, individual layer thickness, and contact pattern of the device are investigated under solar irradiance of AM1.5 for optimized performance of solar cell. The optimized solar cell characteristic parameters for cell area of 1 x 1 mm(2) are open circuit voltage of 2.26 V, short circuit current density of 3.31 mA/cm(2), fill factor of 84.6%, and efficiency of 6.43% with interdigitated grid pattern.
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Publisher |
HINDAWI PUBLISHING CORPORATION
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Date |
2014-12-28T14:50:22Z
2014-12-28T14:50:22Z 2014 |
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Type |
Article
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Identifier |
INTERNATIONAL JOURNAL OF PHOTOENERGY,
1110-662X 1687-529X http://dx.doi.org/10.1155/2014/819637 http://dspace.library.iitb.ac.in/jspui/handle/100/16797 |
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Language |
English
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