Record Details

Field effect transport properties of chemically treated graphene quantum dots

DSpace at IIT Bombay

View Archive Info
 
 
Field Value
 
Title Field effect transport properties of chemically treated graphene quantum dots
 
Creator KALITA, H
HARIKRISHNAN, V
ASLAM, M
 
Subject graphene
quantum dots
p-type
mobility
hole dopant
adsorbates
nanotechnology
MULTIWALLED CARBON NANOTUBES
ELECTROCHEMICAL AVENUE
NANOCRYSTALS
MOLECULES
SENSORS
DEVICES
 
Description We report the field effect properties of lithographically fabricated FET with as-prepared graphene quantum dots (GQDs) and hydrazine treated GQDs as channel material. GQDs of 4.5 +/- 0.55 nm average diameter are synthesised via an electrochemical approach using multiwalled carbon nanotubes (MWCNTs) as precursor. After treatment in hydrazine vapour for 24 h, the field effect measurements yield hole mobility of 0.01 cm(2) V(-1)s(-1) and I-on/I-off ratio of about 45. Hydrazine treated channel shows a significant decrease in resistance in comparison to the channel with as-prepared GQDs and is p-type under ambient conditions.
 
Publisher INDERSCIENCE ENTERPRISES LTD
 
Date 2014-12-28T14:52:22Z
2014-12-28T14:52:22Z
2014
 
Type Article
 
Identifier INTERNATIONAL JOURNAL OF NANOTECHNOLOGY, 11(1/4)75-84
1475-7435
1741-8151
http://dx.doi.org/10.1504/IJNT.2014.059811
http://dspace.library.iitb.ac.in/jspui/handle/100/16801
 
Language English