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Increased photoluminescence of hydrogen-implanted ZnO thin films deposited using a pulsed laser deposition technique

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Title Increased photoluminescence of hydrogen-implanted ZnO thin films deposited using a pulsed laser deposition technique
 
Creator NAGAR, S
GUPTA, SK
CHAKRABARTI, S
 
Subject Zinc oxide
Hydrogen implantation
Photoluminescence
Thermally stimulated current
ZINC-OXIDE
ELECTRICAL-CONDUCTIVITY
OPTICAL CHARACTERISTICS
ION-IMPLANTATION
DONOR
 
Description Low-energy (50 key) hydrogen implantation at a dose of 5 x 10(12) ions/cm(2) was performed on pulsed laser-deposited ZnO thin films. The films were subsequently rapid thermal annealed at 750 degrees, 800, 850 degrees and 900 degrees C in ambient oxygen to remove any implantation-related defects. X-ray diffraction study confirmed deposition of highly c-axis-oriented (0 0 2) ZnO films in all of the samples. Hydrogen implantation did not have any effect on the carrier concentrations or Hall mobility of the samples. A low temperature photoluminescence study showed dominant donor-bound exciton peaks around 3.36 eV along with a shoulder at 337 eV corresponding to the free exciton peak for all of the samples. However, the integrated photoluminescence peak intensity revealed an enhanced intensity of the implanted sample ( x 4 times) and annealed samples (up to 100 x) compared to the as-deposited sample. This enhanced luminescence from the hydrogen-implanted samples may be useful in fabricating highly efficient optoelectronic devices. (C) 2014 Elsevier B.V. All rights reserved.
 
Publisher ELSEVIER SCIENCE BV
 
Date 2014-12-28T15:21:26Z
2014-12-28T15:21:26Z
2014
 
Type Article
 
Identifier JOURNAL OF LUMINESCENCE, 153307-311
0022-2313
1872-7883
http://dx.doi.org/10.1016/j.jlumin.2014.03.052
http://dspace.library.iitb.ac.in/jspui/handle/100/16859
 
Language English