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Grain boundary engineering of La0.7Sr0.3MnO3 films on silicon substrate: Scanning Tunneling Microscopy-Spectroscopy study

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Title Grain boundary engineering of La0.7Sr0.3MnO3 films on silicon substrate: Scanning Tunneling Microscopy-Spectroscopy study
 
Creator JOSHI, A
NORI, R
DHOBALE, S
RAO, VR
KALE, SN
DATAR, S
 
Subject Density of states
Scanning Tunnelling Microscopy/Spectroscopy
Grain boundaries
Pulsed laser deposition technique
Grain boundary engineering
THIN-FILMS
MANGANITES
COMPLEXITY
TRANSPORT
SURFACE
PHYSICS
 
Description We employed a Scanning Tunnelling Microscope (STM) to study the surface topography and spatially resolved local electronic properties like local density of states (LDOS) of nanostructured films of La0.7Sr0.3MnO3 (LSMO). The nanostructured thin films of LSMO on silicon substrate were prepared using Pulsed Laser Deposition (PLD) technique. The deposition conditions were tuned to yield two different morphologies; one with uniform columnar closely packed islands and other with larger grain distribution in random fashion. The Scanning Tunnelling Spectroscopy (STS) revealed the extent of variation of density of states (DOS) near the Fermi level. From the spectroscopic features obtained we found the occurrence of phase separation between conducting and semiconducting domains and its possible correlation with the properties of the system. Semiconducting nature was observed at the grain boundaries, which could be extremely promising in futuristic nano-devices. (C) 2014 Elsevier B.V. All rights reserved.
 
Publisher ELSEVIER SCIENCE BV
 
Date 2014-12-28T16:30:15Z
2014-12-28T16:30:15Z
2014
 
Type Article
 
Identifier PHYSICA B-CONDENSED MATTER, 44885-89
0921-4526
1873-2135
http://dx.doi.org/10.1016/j.physb.2014.03.047
http://dspace.library.iitb.ac.in/jspui/handle/100/16888
 
Language English