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Electrical transport properties of polycrystalline CVD graphene on SiO2/Si substrate

DSpace at IIT Bombay

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Title Electrical transport properties of polycrystalline CVD graphene on SiO2/Si substrate
 
Creator KUMARI, A
PRASAD, N
BHATNAGAR, PK
MATHUR, PC
YADAV, AK
TOMY, CV
BHATIA, CS
 
Subject Graphene
Chemical vapor deposition
Grain boundary characterization
Electrical properties
CHEMICAL-VAPOR-DEPOSITION
FIELD-EFFECT TRANSISTOR
GRAIN-BOUNDARIES
RAMAN-SPECTROSCOPY
FILMS
MOBILITY
COPPER
 
Description Transport behavior of single layer graphene (SLG) grown by chemical vapor deposition technique on copper foil and transferred to SiO2/Si substrate has been studied by measuring the dc conductivity and Hall mobility in the temperature range 2-460 K. The samples of size 1 x 1 cm(2) have been found to be polycrystalline in nature. Raman spectrum has been studied at various locations of the sample and the formation of SLG has been confirmed. From dc conductivity and mobility measurements it has been concluded that the one dimensional grain boundary defects are mainly responsible for the deterioration of mobility and conductivity of charge carriers in the polycrystalline samples. (C) 2014 Elsevier B.V. All rights reserved.
 
Publisher ELSEVIER SCIENCE SA
 
Date 2014-12-28T17:34:54Z
2014-12-28T17:34:54Z
2014
 
Type Article
 
Identifier DIAMOND AND RELATED MATERIALS, 4528-33
0925-9635
1879-0062
http://dx.doi.org/10.1016/j.diamond.2014.03.003
http://dspace.library.iitb.ac.in/jspui/handle/100/17002
 
Language English