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Polarization modulation in GaN-based double-barrier resonant tunneling diodes

DSpace at IIT Bombay

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Title Polarization modulation in GaN-based double-barrier resonant tunneling diodes
 
Creator SANKARANARAYANAN, S
GANGULY, S
SAHA, D
 
Subject MACROSCOPIC POLARIZATION
QUANTUM-WELLS
HETEROSTRUCTURES
ALN
 
Description The effect of polarization modulation on GaN-based double-barrier resonant tunneling diodes is theoretically investigated. The polarization field is shown to improve the performance of these devices by increasing the peak current, peak-to-valley ratio, and negative differential conductance. The high sensitivity of the quantum-well bound energy state with the applied bias explains the observed characteristics. We have further demonstrated that a thin In0.1Ga0.9N layer can significantly improve the performance of the devices by introducing an additional polarization field beyond the second barrier, which reduces the device series resistance and increases the effective second barrier height and width. (C) 2014 The Japan Society of Applied Physics
 
Publisher IOP PUBLISHING LTD
 
Date 2014-12-28T18:04:31Z
2014-12-28T18:04:31Z
2014
 
Type Article
 
Identifier APPLIED PHYSICS EXPRESS, 7(9)
1882-0778
1882-0786
http://dx.doi.org/10.7567/APEX.7.095201
http://dspace.library.iitb.ac.in/jspui/handle/100/17061
 
Language English