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Nitrogen-Terminated Semiconducting Zigzag GNR FET With Negative Differential Resistance

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Title Nitrogen-Terminated Semiconducting Zigzag GNR FET With Negative Differential Resistance
 
Creator KUMAR, A
KUMAR, V
AGARWAL, S
BASAK, A
JAIN, N
BULUSU, A
MANHAS, SK
 
Subject Density functional theory (DFT)
device density of states (DDOS)
graphene
nanoribbons
negative differential resistance (NDR)
nonequilibrium Green's function
projected-density of states (p-DOS)
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Description We investigate the effects of nitrogen passivation on band structure and density of states in zigzag graphene nanoribbon (zzGNR) using first principle quantum mechanical simulations. The results show that nitrogen edge termination of zzGNR produces a bandgap (similar to 0.7eV) around the Fermi level. We analyze the Bloch functions and projected density of states for understanding the origin of the bandgap. Based on these findings, we propose a nitrogen-passivated zzGNR FET structure having n-type electrodes and p-type scattering region using nitrogen and boron doping, respectively. We simulate and analyze its current-voltage (I-V) characteristics using DFT combined with NEGF formalism and device density of states (DDOS). We observe a new negative differential resistance phenomenon in GNR FET, which can be controlled by the variation of the potential applied at gate of the zzGNR FET. This device has potential applications in logic, high frequency, and memory devices.
 
Publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Date 2014-12-29T04:28:24Z
2014-12-29T04:28:24Z
2014
 
Type Article
 
Identifier IEEE TRANSACTIONS ON NANOTECHNOLOGY, 13(1)16-22
1536-125X
1941-0085
http://dx.doi.org/10.1109/TNANO.2013.2279035
http://dspace.library.iitb.ac.in/jspui/handle/100/17076
 
Language English