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Compositional influence on the electrical performance of zinc indium tin oxide transparent thin-film transistors

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Title Compositional influence on the electrical performance of zinc indium tin oxide transparent thin-film transistors
 
Creator MARSAL, A
CARRERAS, P
PUIGDOLLERS, J
VOZ, C
GALINDO, S
ALCUBILLA, R
BERTOMEU, J
ANTONY, A
 
Subject Zinc-indium-tin-oxide
Thin films
Thin-film transistor
Density-of-states
MAGNETRON COSPUTTERING SYSTEM
ZNO
 
Description In this work, zinc indium tin oxide layers with different compositions are used as the active layer of thin film transistors. This multicomponent transparent conductive oxide is gaining great interest due to its reduced content of the scarce indium element. Experimental data indicate that the incorporation of zinc promotes the creation of oxygen vacancies, which results in a higher free carrier density. In thin-film transistors this effect leads to a higher off current and threshold voltage values. The field-effect mobility is also strongly degraded, probably due to coulomb scattering by ionized defects. A post deposition annealing in air reduces the density of oxygen vacancies and improves the field-effect mobility by orders of magnitude. Finally, the electrical characteristics of the fabricated thin-film transistors have been analyzed to estimate the density of states in the gap of the active layers. These measurements reveal a clear peak located at 0.3 eV from the conduction band edge that could be attributed to oxygen vacancies. (C) 2013 Elsevier B.V. All rights reserved.
 
Publisher ELSEVIER SCIENCE SA
 
Date 2014-12-29T05:25:04Z
2014-12-29T05:25:04Z
2014
 
Type Article
 
Identifier THIN SOLID FILMS, 555107-111
0040-6090
http://dx.doi.org/10.1016/j.tsf.2013.08.010
http://dspace.library.iitb.ac.in/jspui/handle/100/17187
 
Language English