Novel synaptic memory device for neuromorphic computing
DSpace at IIT Bombay
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Title |
Novel synaptic memory device for neuromorphic computing
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Creator |
MANDAL, S
EL-AMIN, A ALEXANDER, K RAJENDRAN, B JHA, R |
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Subject |
TIMING DEPENDENT PLASTICITY
NEURONS SYNAPSES SYSTEMS |
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Description |
This report discusses the electrical characteristics of two-terminal synaptic memory devices capable of demonstrating an analog change in conductance in response to the varying amplitude and pulse-width of the applied signal. The devices are based on Mn doped HfO2 material. The mechanism behind reconfiguration was studied and a unified model is presented to explain the underlying device physics. The model was then utilized to show the application of these devices in speech recognition. A comparison between a 20 nm x 20 nm sized synaptic memory device with that of a state-of-the-art VLSI SRAM synapse showed similar to 10x reduction in area and >10(6) times reduction in the power consumption per learning cycle.
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Publisher |
NATURE PUBLISHING GROUP
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Date |
2014-12-29T05:58:43Z
2014-12-29T05:58:43Z 2014 |
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Type |
Article
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Identifier |
SCIENTIFIC REPORTS, 4
2045-2322 http://dx.doi.org/10.1038/srep05333 http://dspace.library.iitb.ac.in/jspui/handle/100/17253 |
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Language |
English
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