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Atomic layer deposition of textured zinc nitride thin films

DSpace at IIT Bombay

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Field Value
 
Title Atomic layer deposition of textured zinc nitride thin films
 
Creator SINHA, S
SARKAR, SK
 
Subject OPTICAL-PROPERTIES
SURFACE-CHEMISTRY
TRIMETHYLALUMINUM
PRECURSORS
EPITAXY
AMMONIA
BATTERIES
ALUMINA
GROWTH
MOCVD
 
Description Zinc nitride films are deposited by Atomic Layer Deposition (ALD) within a temperature range of 150-315 degrees C using diethylzinc (DEZ) and ammonia (NH3). Self-limiting growth characteristics are examined by an in situ Quartz crystal microbalance (QCM) that is subsequently verified and complemented by ex situ X-ray reflectivity (XRR) measurements. A saturated growth rate of ca. 1.4 angstrom per ALD cycle is obtained within the ALD temperature window of 175-215 degrees C. In situ Fourier transform infrared (FTIR) spectroscopy is employed to study the reaction mechanism during each ALD half cycle. As deposited films on microscope glass substrates have strong orientation in the {321} direction. Films are found to be optically transparent with band-edge photoluminescence.
 
Publisher ROYAL SOC CHEMISTRY
 
Date 2014-12-29T06:11:57Z
2014-12-29T06:11:57Z
2014
 
Type Article
 
Identifier RSC ADVANCES, 4(88)47177-47183
2046-2069
http://dx.doi.org/10.1039/c4ra06308b
http://dspace.library.iitb.ac.in/jspui/handle/100/17279
 
Language English