Record Details

Effect of barrier thickness on structural, optical, and spectral behaviors of vertically strain coupled InAs/GaAs quantum dot infrared photodetectors

DSpace at IIT Bombay

View Archive Info
 
 
Field Value
 
Title Effect of barrier thickness on structural, optical, and spectral behaviors of vertically strain coupled InAs/GaAs quantum dot infrared photodetectors
 
Creator GHADI, H
AGARWAL, A
ADHIKARY, S
TONGBRAM, B
MANDEL, A
CHAKRABARTI, S
PENDYALA, NB
PRAJAPATI, S
KUMAR, A
 
Subject HIGH-TEMPERATURE
GAAS
EMISSION
GROWTH
NANOSTRUCTURE
WAVELENGTH
 
Description The optical, electrical, and spectral properties of a strain coupled InAs quantum dot detector with a fixed quaternary capping of InAlGaAs and variable GaAs barrier thickness were investigated along with an equivalent uncoupled structure. Self-assembled quantum dots with a multimodal dot size distribution were achieved owing to vertical strain coupling. Strain and electronic coupling were utilized to improve the optical and electrical performance of the fabricated quantum dot infrared photodetector. The peak spectral response was tuned by varying barrier thickness, and a blue shift (almost 1 mu m) was observed by increasing the capping thickness from sample A (90 angstrom capping) to E (500 angstrom capping). High responsivity and detectivity (similar to 10(10) cm Hz(1/2)W) were observed for all coupled samples as compared to the uncoupled sample. All coupled samples showed high thermal stability in the photoluminescence peak with high-temperature annealing. (C) 2014 American Vacuum Society.
 
Publisher A V S AMER INST PHYSICS
 
Date 2014-12-29T06:23:31Z
2014-12-29T06:23:31Z
2014
 
Type Article
 
Identifier JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 32(5)
1071-1023
http://dx.doi.org/10.1116/1.4894461
http://dspace.library.iitb.ac.in/jspui/handle/100/17301
 
Language English