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Surface and bulk electronic properties of low temperature synthesized InN microcrystals

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Title Surface and bulk electronic properties of low temperature synthesized InN microcrystals
 
Creator BARICK, BK
DHAR, S
 
Subject INDIUM NITRIDE INN
RAMAN-SCATTERING
GROWTH
SEMICONDUCTORS
DECOMPOSITION
SPECTROSCOPY
FILMS
Characterization
X-ray diffraction
Nitrides
Semiconducting III-V materials
 
Description Structural and electronic properties of IaN microcrystals, which are synthesized by nitridation of LiInO2 with NaNH2 in a Teflon-lined autoclave at temperatures ranging between 170 and 240 degrees C. are studied as a function of the growth temperature using x-ray diffraction (XRD), high resolution transmission electron microscopy (HRTEM), photo-absorption, Raman spectroscopy and x-ray photo-emission spectroscopy (XPS) techniques. Our study shows the formation of wurtzite InN crystals with an average size of 100 nm even at 170 degrees C. The study, furthermore, suggests an enhancement of electron concentration and a reduction of electron mobility in the crystal as the synthesis temperature (T-s) decreases. The density of certain defects lying very close to the band edge is also found to increase with the reduction of T-s. These defects are expected to act as donors, which can explain the enhancement of carrier concentration as the growth temperature decreases. (C) 2015 Elsevier B.V. All rights reserved.
 
Publisher ELSEVIER SCIENCE BV
 
Date 2016-01-14T12:51:08Z
2016-01-14T12:51:08Z
2015
 
Type Article
 
Identifier JOURNAL OF CRYSTAL GROWTH, 416,154-158
0022-0248
1873-5002
http://dx.doi.org/10.1010/j.jcrysgro.2015.01.010
http://dspace.library.iitb.ac.in/jspui/handle/100/17542
 
Language en