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Effect of Sn doping on properties of transparent ZnO thin films prepared by thermal evaporation technique

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Title Effect of Sn doping on properties of transparent ZnO thin films prepared by thermal evaporation technique
 
Creator SHEEBA, NH
VATTAPPALAM, SC
NADUVATH, J
SREENIVASAN, PV
MATHEW, S
PHILIP, RR
 
Subject CHEMICAL-VAPOR-DEPOSITION
ELECTROOPTICAL PROPERTIES
BATH DEPOSITION
GROWTH
DEVICES
SENSOR
LAYER
 
Description Sn doping is used as an effective method to increase conductivity and photosensitivity of highly transparent nanostructured ZnO thin films, prepared by multisource vacuum evaporation followed by air annealing. The microstructural characterizations reveal formation of polycrystalline ZnO and ZnO:Sn films, with grain size similar to 16-20nm and preferred orientation along (002) plane. Increased electrical conductivity by a factor similar to 10(2) on doping, coupled with the enhancement of transmittance (80-90% in visible range) and photoconductivity lends these wide band gap films (similar to 3.21 eV-3.24 eV) application in photovoltaics. Fast response to ethanol (5-7s) indicates suitability of these films in gas sensors. (c) 2015 Elsevier B.V. All rights reserved.
 
Publisher ELSEVIER SCIENCE BV
 
Date 2016-01-14T13:35:27Z
2016-01-14T13:35:27Z
2015
 
Type Article
 
Identifier CHEMICAL PHYSICS LETTERS, 635,290-294
0009-2614
1873-4448
http://dx.doi.org/10.1016/j.cplett.2015.07.009
http://dspace.library.iitb.ac.in/jspui/handle/100/17629
 
Language en