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A detailed study of the effects of rapid thermal annealing on the luminescence properties of InAs sub-monolayer quantum dots

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Title A detailed study of the effects of rapid thermal annealing on the luminescence properties of InAs sub-monolayer quantum dots
 
Creator MANOHAR, A
SENGUPTA, S
GHADI, H
CHAKRABARTI, S
 
Subject SURFACE-EMITTING LASERS
POWER
III-V semiconductor
Molecular beam epitaxy
Sub-monolayer quantum dots
Rapid thermal annealing
Photoluminescence
 
Description We studied the effects of post-growth annealing on InAs sub-monolayer samples with different numbers of quantum dot stacks embedded in InGaAs wells. Four samples, with 4, 6, 8, and 10 dot stacks, were grown with solid phase, molecular beam epitaxy under invariant conditions. Increasing the number of stacks created a gradual shift in the photoluminescence ground-state transition energy of the samples from 1.195 to 1.111 eV. Subjecting the samples to post-growth thermal annealing at 650, 700, 750, and 800 degrees C produced a typical blue-shift The full-width-half-maxima of the emission spectrum narrowed with an increase in annealing temperature. All samples exhibited significant enhancement in their activation energies when annealed at 650 degrees C, suggesting that annealing healed defects created during sample growth. (C) 2014 Elsevier B.V. All rights reserved.
 
Publisher ELSEVIER SCIENCE BV
 
Date 2016-01-14T14:24:13Z
2016-01-14T14:24:13Z
2015
 
Type Article
 
Identifier JOURNAL OF LUMINESCENCE, 158,149-152
0022-2313
1872-7883
http://dx.doi.org/10.1016/j.jlumin.2014.09.043
http://dspace.library.iitb.ac.in/jspui/handle/100/17719
 
Language en