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The optical properties of strain-coupled InAs/GaAs quantum-dot heterostructures with varying thicknesses of GaAs and InGaAs spacer layers

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Title The optical properties of strain-coupled InAs/GaAs quantum-dot heterostructures with varying thicknesses of GaAs and InGaAs spacer layers
 
Creator SHETTY, S
ADHIKARY, S
TONGBRAM, B
AHMAD, A
GHADI, H
CHAKRABARTI, S
 
Subject INFRARED PHOTODETECTORS
EMISSION WAVELENGTH
REDUCING LAYERS
INAS ISLANDS
MU-M
GROWTH
SIZE
SUPERLATTICES
INALGAAS
LASERS
Quantum dot
Strain
Coupled structure
Multimodal distribution
Photoluminescence
Spectral response
 
Description We present a detailed investigation on the optical properties of a 30-layer, strain-coupled InAs/GaAs quantum dot heterostructure. Using a combination of thin In0.15Ga0.85As and GaAs capping layers, we studied the effects of varying their thicknesses on the photoluminescence emission spectrum. From the photoluminescence peak multimodal distribution of the quantum dots is observed. The emission peaks exhibit an initial red-shift; further increasing the thickness of the GaAs spacer produces a continuous blue-shift, and increasing the In0.15Ga0.85As spacer thickness produces a red-shift The FWHM increases (from a minimum of 22 nm) and activation energy decreases (with maximum of 377 meV) with an increase in the thickness of either spacer, starting from a combination of 2-nm In0.15Ga0.85As and 10-nm GaAs capping layers. The inter-subband spectral responses obtained from the fabricated single-pixel detectors are in the mid infrared range. (C) 2014 Elsevier B.V. All rights reserved.
 
Publisher ELSEVIER SCIENCE BV
 
Date 2016-01-14T14:24:43Z
2016-01-14T14:24:43Z
2015
 
Type Article
 
Identifier JOURNAL OF LUMINESCENCE, 158,231-235
0022-2313
1872-7883
http://dx.doi.org/10.1016/j.jlumin.2014.10.013
http://dspace.library.iitb.ac.in/jspui/handle/100/17720
 
Language en