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Effects of high energy proton implantation on the optical and electrical properties of In(Ga)as/GaAs QD heterostructures with variations in the capping layer

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Title Effects of high energy proton implantation on the optical and electrical properties of In(Ga)as/GaAs QD heterostructures with variations in the capping layer
 
Creator UPADHYAY, S
MANDAL, A
GHADI, H
PAL, D
BASU, A
AGARWAL, A
SUBRAHMANYAM, NBV
SINGH, P
CHAKRABARTI, S
 
Subject INAS/GAAS QUANTUM DOTS
INFRARED PHOTODETECTORS
DARK CURRENT
PHOTOLUMINESCENCE
ENHANCEMENT
EMISSION
LASERS
GAAS
EFFICIENCY
PL efficiency
InAs/GaAs quantum dots
Ion implantation
Defect passivation
 
Description This study reports enhancements in photoluminescence (PL) efficiency resulting from implanting InAs/GaAs quantum dots with high energy protons without any post-annealing treatment and discusses the effects that result from varying the capping layer over dots. The PL efficiency for proton-implanted samples increased when the fluence of the 3 MeV protons improved from 8.0 x 10(11) to 1.0 x 10(13) ions/cm(2). Up to a certain point, variations in the proton energy level improved the PL efficiency. The improvements in PL efficiency resulted from annihilation of defects and non-radiative recombination centers from the dots and capping layer. Increments in the thermal activation energy of the implanted samples confirmed the finding. To determine the validity of the improvement on the optical properties of the dots, we implanted an InGaAs/GaAs quantum dot infrared photodetector (QDIP) heterostructure with 3 MeV protons. The implanted QDIP exhibited suppressed dark current density and enhanced peak detectivity by two orders compared to the as-grown devices. (C) 2015 Elsevier B.V. All rights reserved.
 
Publisher ELSEVIER SCIENCE BV
 
Date 2016-01-14T14:25:14Z
2016-01-14T14:25:14Z
2015
 
Type Article
 
Identifier JOURNAL OF LUMINESCENCE, 161,129-134
0022-2313
1872-7883
http://dx.doi.org/10.1016/j.jlumin.2015.01.002
http://dspace.library.iitb.ac.in/jspui/handle/100/17721
 
Language en