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Giant anomalous Hall effect in ultrathin Si/Fe bilayers

DSpace at IIT Bombay

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Title Giant anomalous Hall effect in ultrathin Si/Fe bilayers
 
Creator DAS, SS
KUMAR, MS
 
Subject SPINTRONICS
Anomalous Hall effect
Magnetron sputtering
Magnetic multilayers
Hall coefficients
Hall resistance
 
Description Anomalous Hall effect studies on ultrathin Si(50 angstrom)/Fe(t(Fe)) bilayers were performed at 300 K. Giant enhancements of about 60 times in saturation anomalous Hall resistivity and 265 times in anomalous Hall coefficient (R-s) were observed upon decreasing the Fe layer thickness t(Fe) from 200 to 10 angstrom. The R-s observed for t(Fe)=10 angstrom is about three orders of magnitude larger than that of bulk Fe. Scaling law between R-s and longitudinal electrical resistivity (rho) suggests that the side jump is the dominant mechanism of the anomalous Hall effect. The observed largest Hall sensitivity of 433 Omega/T surpasses that of the semiconducting GaAs and InAs Hall sensors already reported. (C) 2014 Elsevier B.V. All rights reserved.
 
Publisher ELSEVIER SCIENCE BV
 
Date 2016-01-15T04:36:16Z
2016-01-15T04:36:16Z
2015
 
Type Article
 
Identifier MATERIALS LETTERS, 142,317-319
0167-577X
1873-4979
http://dx.doi.org/10.1016/j.matlet.2014.12.042
http://dspace.library.iitb.ac.in/jspui/handle/100/17773
 
Language en