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Design of SET tolerant LC oscillators using distributed bias circuitry

DSpace at IIT Bombay

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Title Design of SET tolerant LC oscillators using distributed bias circuitry
 
Creator JAGTAP, S
SHARMA, D
GUPTA, S
 
Subject CMOS TECHNOLOGY
Radiation hardening
Single event transient effects
Voltage-controlled oscillator
 
Description In this paper, a distributed biasing technique is proposed to improve the single event transient (SET) tolerance in LC-tank voltage controlled oscillators. The charge generated by a radiation strike at the drain of the bias current transistor results in voltage change at the drain node, which causes change in the output impedance of the transistor. This effect is more pronounced in the case of distributed biasing, and is used for improving the SET tolerance in the oscillator. Circuit simulations show that the phase error introduced due to a radiation strike is reduced to one-third in a 14 GHz LC-VCO designed in a standard 90 nm CMOS technology when the distributed bias is used, as compared to the phase error in a conventional LC-VCO. (C) 2015 Elsevier Ltd. All rights reserved.
 
Publisher PERGAMON-ELSEVIER SCIENCE LTD
 
Date 2016-01-15T04:39:18Z
2016-01-15T04:39:18Z
2015
 
Type Article
 
Identifier MICROELECTRONICS RELIABILITY, 55(42257)1537-1541
0026-2714
http://dx.doi.org/10.1016/j.microrel.2015.07.017
http://dspace.library.iitb.ac.in/jspui/handle/100/17779
 
Language en