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Recrystallization and phase stability study of cesium tin iodide for application as a hole transporter in dye sensitized solar cells

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Title Recrystallization and phase stability study of cesium tin iodide for application as a hole transporter in dye sensitized solar cells
 
Creator PEEDIKAKKANDY, L
BHARGAVA, P
 
Subject X-RAY-DIFFRACTION
ELECTRICAL-CONDUCTIVITY
THIN-FILMS
CSSNI3
PHOTOLUMINESCENCE
SEMICONDUCTOR
TRANSITIONS
Perovskite
Hole transport material
Solid state dye sensitized solar cells
Cesium tin iodide
 
Description In this work, we report synthesis and stability analysis of cesium tin iodide (CsSnI3) prepared through solid state and solution route methods for its application as a hole transport layer in dye sensitized solar cells (DSSC). Phase formation, chemical stability and degradation mechanism of CsSnI3 were studied using X-ray diffraction (XRD), Energy-dispersive X-ray spectroscopy (EDS), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), and Raman spectroscopy. Optical band gap of the material was studied using UV-vis spectroscopy and photoluminescence studies. CsSnI3 synthesized through solid state route was used as a hole transport material (HTM) for dye sensitized solar cells with cell efficiency up to 3%. Temperature dependent excitonic emission studies shows that B-gamma-CsSnI3 shows a linear increase in band gap with increasing temperature. (C) 2015 Elsevier Ltd. All rights reserved.
 
Publisher ELSEVIER SCI LTD
 
Date 2016-01-15T04:44:56Z
2016-01-15T04:44:56Z
2015
 
Type Article
 
Identifier MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 33,103-109
1369-8001
1873-4081
http://dx.doi.org/10.1016/j.mssp.2015.01.023
http://dspace.library.iitb.ac.in/jspui/handle/100/17790
 
Language en