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Poly(vinyl alcohol) gate dielectric surface treatment with vitamin C for poly(3-hexylthiophene-2,5-diyl) based field effect transistors performance improvement

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Title Poly(vinyl alcohol) gate dielectric surface treatment with vitamin C for poly(3-hexylthiophene-2,5-diyl) based field effect transistors performance improvement
 
Creator DE COL, C
NAWAZ, A
CRUZ-CRUZ, I
KUMAR, A
KUMAR, A
HUMMELGEN, IA
 
Subject THIN-FILM TRANSISTORS
MOBILITY
POLYMER
INSULATORS
Organic field-effect transistor
Poly(3-hexylthiophene-2,5-diyl)
Poly(vinyl alcohol)gate dielectric
Surface passivation
 
Description We report on organic field effect transistors (OFETs) prepared using cross-linked poly(vinyl alcohol) (cr-PVA) as gate dielectric and 100% regioregular poly(3-hexylthiophene-2,5-diyl) (P3HT) as channel semiconductor. The gate dielectric surface was treated using an environmentally friendly aqueous solution of ascorbic acid (vitamin C), which is a reducing agent. The treatment contributed to the passivation of positively charged defects present on the surface of cr-PVA gate dielectric, hence resulting in the enhancement of capacitance, field effect mobility, ON/OFF current ratio and sub-threshold swing. (C) 2014 Elsevier B.V. All rights reserved.
 
Publisher ELSEVIER SCIENCE BV
 
Date 2016-01-15T04:52:02Z
2016-01-15T04:52:02Z
2015
 
Type Article
 
Identifier ORGANIC ELECTRONICS, 17,22-27
1566-1199
1878-5530
http://dx.doi.org/10.1016/j.orgel.2014.11.015
http://dspace.library.iitb.ac.in/jspui/handle/100/17804
 
Language en