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Passivation study of multi-crystalline silicon wafer with i-a-Si:H layer deposited by HWCVD

DSpace at IIT Bombay

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Title Passivation study of multi-crystalline silicon wafer with i-a-Si:H layer deposited by HWCVD
 
Creator AGARWAL, M
DUSANE, RO
 
Subject CHEMICAL-VAPOR-DEPOSITION
SOLAR-CELLS
FILMS
HWCVD
Multi-crystalline silicon wafer
i-a-Si:H passivation layer
 
Description Heterojunction solar cells (a-Si: H/c-Si) are interface dominated devices and hence suppression of charge carrier recombination at the a-Si: H/c-Si interface is a very important aspect. Till now, all efforts and results have been obtained on mono-crystalline silicon. It would be very important from the technological point of view if similar high efficiency devices are realized on cheaper mc-Si wafers. The aim of this work is to study the passivation effect on mc-Si wafer by i-a-Si: H thin layer. The i-a-Si: H thin passivation layer is deposited on mc-Si wafer by Hot-Wire CVD at various filament temperature and silane flow rates. The passivation effect has been studied by effective carrier lifetime measurement and implied open circuit voltage. (C) 2014 Elsevier B.V. All rights reserved.
 
Publisher ELSEVIER SCIENCE SA
 
Date 2016-01-15T05:58:08Z
2016-01-15T05:58:08Z
2015
 
Type Article
 
Identifier THIN SOLID FILMS, 575,64-66
0040-6090
http://dx.doi.org/10.1016/j.tsf.2014.10.025
http://dspace.library.iitb.ac.in/jspui/handle/100/17873
 
Language en