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Segregation of In to Dislocations in InGaN

DSpace at IIT Bombay

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Title Segregation of In to Dislocations in InGaN
 
Creator HORTON, MK
RHODE, S
SAHONTA, SL
KOPPERS, MJ
HAIGH, SJ
PENNYCOOK, TJ
HUMPHREYS, CJ
DUSANE, RO
MORAM, MA
 
Subject LIGHT-EMITTING-DIODES
TRANSMISSION ELECTRON-MICROSCOPY
SCREW DISLOCATIONS
PHASE-SEPARATION
QUANTUM-WELLS
GAN
SEMICONDUCTORS
LOCALIZATION
PARAMETERS
ALLOYS
Dislocations
III-nitrides
Monte Carlo
alloy segregation
atomistic modeling
STEM-EDX
 
Description Dislocations are one-dimensional topological defects that occur frequently in functional thin film materials and that are known to degrade the performance of InxGa1-xN-based optoelectronic devices. Here, we show that large local deviations in alloy composition and atomic structure are expected to occur in and around dislocation cores in InxGa1-xN alloy thin films. We present energy-dispersive X-ray spectroscopy data supporting this result. The methods presented here are also widely applicable for predicting composition fluctuations associated with strain fields in other inorganic functional material thin films.
 
Publisher AMER CHEMICAL SOC
 
Date 2016-01-15T06:32:43Z
2016-01-15T06:32:43Z
2015
 
Type Article
 
Identifier NANO LETTERS, 15(2)923-930
1530-6984
1530-6992
http://dx.doi.org/10.1021/nl5036513
http://dspace.library.iitb.ac.in/jspui/handle/100/17941
 
Language en