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Carrier Transport in High Mobility In As Nanowire Junction less Transistors

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Title Carrier Transport in High Mobility In As Nanowire Junction less Transistors
 
Creator KONAR, A
MATHEW, J
NAYAK, K
BAJAJ, M
PANDEY, RK
DHARA, S
MURALI, KVRM
DESHMUKH, MM
 
Subject ELECTRON-MOBILITY
INAS NANOWIRES
SEMICONDUCTOR
HETEROSTRUCTURES
InAs
nanowire
scattering transport
field-effect transistors
 
Description The ability to understand and model the performance limits of nanowire transistors is the key to the design of next generation devices. Here, we report studies on high-mobility junctionless gate-all-around nanowire field effect transistor with carrier mobility reaching 2000 cm2/V(.)s at room temperature. Temperature-dependent transport measurements reveal activated transport at low temperatures due to surface donors, while at room temperature the transport shows a diffusive behavior. From the conductivity data, the extracted value of sound velocity in InAs nanowires is found to be an order less than the bulk. This low sound velocity is attributed to the extended crystal defects that ubiquitously appear in these nanowires. Analyzing the temperature-dependent mobility data, we identify the key scattering mechanisms limiting the carrier transport in these nanowires. Finally, using these scattering models, we perform drift-diffusion based transport simulations of a nanowire field-effect transistor and compare the device performances with experimental measurements. Our device modeling provides insight into performance limits of InAs nanowire transistors and can be used as a predictive methodology for nanowire-based integrated circuits.
 
Publisher AMER CHEMICAL SOC
 
Date 2016-01-15T06:33:14Z
2016-01-15T06:33:14Z
2015
 
Type Article
 
Identifier NANO LETTERS, 15(3)1684-1690
1530-6984
1530-6992
http://dx.doi.org/10.1021/nl5043165
http://dspace.library.iitb.ac.in/jspui/handle/100/17942
 
Language en