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Atomic layer deposition of Zn3N2 thin films: growth mechanism and application in thin film transistor

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Title Atomic layer deposition of Zn3N2 thin films: growth mechanism and application in thin film transistor
 
Creator SINHA, S
CHOUDHURY, D
RAJARAMAN, G
SARKAR, SK
 
Subject EFFECTIVE CORE POTENTIALS
OPTICAL BAND-GAP
ZINC NITRIDE
MOLECULAR CALCULATIONS
GATE DIELECTRICS
ZNO
PRECURSOR
DENSITY
CHANNEL
SILICON
 
Description In this paper we present atomic layer deposition (ALD) of zinc nitride thin films using diethylzinc (DEZ) and ammonia (NH3). Density Functional Theory (DFT) is used to calculate the atomistic reaction pathway. The self-limiting growth characteristic is verified at 315 degrees C. Saturated growth rate is found to be 0.9 angstrom per ALD cycle. The as deposited films are found to be polycrystalline with preferential orientation in the {321} direction. The performance of the material is further investigated as channel layer in thin film transistor TFT) applications.
 
Publisher ROYAL SOC CHEMISTRY
 
Date 2016-01-15T06:56:40Z
2016-01-15T06:56:40Z
2015
 
Type Article
 
Identifier RSC ADVANCES, 5(29)22712-22717
2046-2069
http://dx.doi.org/10.1039/c4ra12776e
http://dspace.library.iitb.ac.in/jspui/handle/100/17988
 
Language en