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Detection of a high photoresponse at zero bias from a highly conducting ZnO:Ga based UV photodetector

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Title Detection of a high photoresponse at zero bias from a highly conducting ZnO:Ga based UV photodetector
 
Creator SHARMA, P
SINGH, R
AWASTHI, V
PANDEY, SK
GARG, V
MUKHERJEE, S
 
Subject THIN-FILMS
OPTICAL-PROPERTIES
NANOWIRE ARRAYS
TRANSPARENT
TEMPERATURE
GAN
 
Description Ga-doped ZnO (GZO) based ultraviolet photodetectors (PDs) were fabricated by dual ion beam sputtering with a metal-semiconductor-metal structure. The room-temperature operable PD demonstrated responsivity of 58 mA W-1 at zero bias, which is 15 times larger than that reported on similar material grown by a different physical vapour deposition process, with internal and external quantum efficiency values of similar to 22.5% and 37.4%. The unbiased photodetection is attributed to the tunnelling of electrons due to heavy doping of GZO and built-in electric field due to different barriers at the two metal semiconductor contacts. The asymmetry in the electrodes was investigated by temperature-dependent current-voltage measurements.
 
Publisher ROYAL SOC CHEMISTRY
 
Date 2016-01-15T07:26:17Z
2016-01-15T07:26:17Z
2015
 
Type Article
 
Identifier RSC ADVANCES, 5(104)85523-85529
2046-2069
http://dx.doi.org/10.1039/c5ra13921j
http://dspace.library.iitb.ac.in/jspui/handle/100/18046
 
Language en