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Domain matched epitaxial growth of (111) Ba0.5Sr0.5TiO3 thin films on (0001) Al2O3 with ZnO buffer layer

DSpace at IIT Bombay

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Title Domain matched epitaxial growth of (111) Ba0.5Sr0.5TiO3 thin films on (0001) Al2O3 with ZnO buffer layer
 
Creator KRISHNAPRASAD, PS
ANTONY, A
ROJAS, F
JAYARAJ, MK
 
Subject FIELD-EFFECT TRANSISTORS
PULSED-LASER DEPOSITION
DIELECTRIC-PROPERTIES
SRTIO3
FERROELECTRICITY
HETEROSTRUCTURES
VOLTAGE
 
Description Epitaxial (111) Ba0.5Sr0.5TiO3 (BST) thin films have been grown by pulsed laser deposition on (0001) Al2O3 substrate with ZnO as buffer layer. The x-ray omega-2 theta, Phi-scan and reciprocal space mapping indicate epitaxial nature of BST thin films. The domain matched epitaxial growth of BST thin films over ZnO buffer layer was confirmed using Fourier filtered high resolution transmission electron microscope images of the film-buffer interface. The incorporation of ZnO buffer layer effectively suppressed the lattice mismatch and promoted domain matched epitaxial growth of BST thin films. Coplanar inter digital capacitors fabricated on epitaxial (111) BST thin films show significantly improved tunable performance over polycrystalline thin films. (C) 2015 AIP Publishing LLC.
 
Publisher AMER INST PHYSICS
 
Date 2016-01-15T07:41:05Z
2016-01-15T07:41:05Z
2015
 
Type Article
 
Identifier JOURNAL OF APPLIED PHYSICS, 117(12)
0021-8979
1089-7550
http://dx.doi.org/10.1063/1.4915949
http://dspace.library.iitb.ac.in/jspui/handle/100/18075
 
Language en