Domain matched epitaxial growth of (111) Ba0.5Sr0.5TiO3 thin films on (0001) Al2O3 with ZnO buffer layer
DSpace at IIT Bombay
View Archive InfoField | Value | |
Title |
Domain matched epitaxial growth of (111) Ba0.5Sr0.5TiO3 thin films on (0001) Al2O3 with ZnO buffer layer
|
|
Creator |
KRISHNAPRASAD, PS
ANTONY, A ROJAS, F JAYARAJ, MK |
|
Subject |
FIELD-EFFECT TRANSISTORS
PULSED-LASER DEPOSITION DIELECTRIC-PROPERTIES SRTIO3 FERROELECTRICITY HETEROSTRUCTURES VOLTAGE |
|
Description |
Epitaxial (111) Ba0.5Sr0.5TiO3 (BST) thin films have been grown by pulsed laser deposition on (0001) Al2O3 substrate with ZnO as buffer layer. The x-ray omega-2 theta, Phi-scan and reciprocal space mapping indicate epitaxial nature of BST thin films. The domain matched epitaxial growth of BST thin films over ZnO buffer layer was confirmed using Fourier filtered high resolution transmission electron microscope images of the film-buffer interface. The incorporation of ZnO buffer layer effectively suppressed the lattice mismatch and promoted domain matched epitaxial growth of BST thin films. Coplanar inter digital capacitors fabricated on epitaxial (111) BST thin films show significantly improved tunable performance over polycrystalline thin films. (C) 2015 AIP Publishing LLC.
|
|
Publisher |
AMER INST PHYSICS
|
|
Date |
2016-01-15T07:41:05Z
2016-01-15T07:41:05Z 2015 |
|
Type |
Article
|
|
Identifier |
JOURNAL OF APPLIED PHYSICS, 117(12)
0021-8979 1089-7550 http://dx.doi.org/10.1063/1.4915949 http://dspace.library.iitb.ac.in/jspui/handle/100/18075 |
|
Language |
en
|
|