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Fabrication and characterisation of gallium arsenide ambipolar quantum point contacts

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Title Fabrication and characterisation of gallium arsenide ambipolar quantum point contacts
 
Creator CHEN, JCH
KLOCHAN, O
MICOLICH, AP
DAS GUPTA, K
SFIGAKIS, F
RITCHIE, DA
TRUNOV, K
REUTER, D
WIECK, AD
HAMILTON, AR
 
Subject TRANSPORT
HOLES
GAAS
DOTS
 
Description We show that ballistic one-dimensional channels can be formed in an ambipolar device fabricated on a high mobility Al0.34Ga0.66As/GaAs heterostructure. Both electron and hole quantised conductances can be measured in the same one-dimensional channel. We have used this device to compare directly the subband spacings of the two charge carriers in the same confining potential and used this to compare the electron and hole effective masses. (c) 2015 AIP Publishing LLC.
 
Publisher AMER INST PHYSICS
 
Date 2016-01-15T07:42:07Z
2016-01-15T07:42:07Z
2015
 
Type Article
 
Identifier APPLIED PHYSICS LETTERS, 106(18)
0003-6951
1077-3118
http://dx.doi.org/10.1063/1.4918934
http://dspace.library.iitb.ac.in/jspui/handle/100/18077
 
Language en