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High-mobility and low-operating voltage organic thin film transistor with epoxy based siloxane binder as the gate dielectric

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Title High-mobility and low-operating voltage organic thin film transistor with epoxy based siloxane binder as the gate dielectric
 
Creator TEWARI, A
GANDLA, S
PININTI, AR
KARUPPASAMY, K
BOHM, S
BHATTACHARYYA, AR
MCNEILL, CR
GUPTA, D
 
Subject FIELD-EFFECT TRANSISTORS
SELF-ASSEMBLED MONOLAYERS
PERFORMANCE
ELECTRONICS
LAYERS
 
Description This paper reports the fabrication of pentacene-based organic thin-film transistors using a dielectric material, Dynasylan (R) SIVO110. The devices exhibit excellent performance characterized by a low threshold voltage of -1.4V (operating voltage: 0 to -4V) together with a mobility of 1.9 cm(2) V(-1)s(-1). These results are promising because it uses only a single layer of dielectric without performing any intermediate treatment. The reason is attributed to the high charge storage capacity of the dielectric (kappa similar to 20.02), a low interfacial trap density (2.56 x 10(11) cm(-2)), and favorable pentacene film morphology consisting of large and interconnected grains having an average size of 234 nm. (C) 2015 AIP Publishing LLC.
 
Publisher AMER INST PHYSICS
 
Date 2016-01-15T07:45:42Z
2016-01-15T07:45:42Z
2015
 
Type Article
 
Identifier APPLIED PHYSICS LETTERS, 107(10)
0003-6951
1077-3118
http://dx.doi.org/10.1063/1.4930305
http://dspace.library.iitb.ac.in/jspui/handle/100/18084
 
Language en