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Electrically injected ultra-low threshold room temperature InGaN/GaN-based lateral triangular nanowire laser

DSpace at IIT Bombay

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Title Electrically injected ultra-low threshold room temperature InGaN/GaN-based lateral triangular nanowire laser
 
Creator BANERJEE, D
TAKHAR, K
SANKARANARAYANAN, S
UPADHYAY, P
RUIA, R
CHOUKSEY, S
KHACHARIYA, D
GANGULY, S
SAHA, D
 
Subject GAN
 
Description We have demonstrated an electrically injected ultra-low threshold (8.9 nA) room temperature InGaN/GaN based lateral nanowire laser. The nanowires are triangular in shape and survived naturally after etching using boiling phosphoric acid. A polymethyl methacrylate (PMMA) and air dielectric distributed mirror provide an optical feedback, which together with one-dimensional density of states cause ultra-low threshold lasing. Finite difference eigen-mode (FDE) simulation shows that triangular nanowire cavity supports single dominant mode similar to TE01 that of a corresponding rectangular cavity with a confinement factor of 0.18. (C) 2015 AIP Publishing LLC.
 
Publisher AMER INST PHYSICS
 
Date 2016-01-15T07:46:14Z
2016-01-15T07:46:14Z
2015
 
Type Article
 
Identifier APPLIED PHYSICS LETTERS, 107(10)
0003-6951
1077-3118
http://dx.doi.org/10.1063/1.4930825
http://dspace.library.iitb.ac.in/jspui/handle/100/18085
 
Language en