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Dual role of boron in improving electrical performance and device stability of low temperature solution processed ZnO thin film transistors

DSpace at IIT Bombay

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Title Dual role of boron in improving electrical performance and device stability of low temperature solution processed ZnO thin film transistors
 
Creator GANDLA, S
GOLLU, SR
SHARMA, R
SARANGI, V
GUPTA, D
 
Subject DOPED ZNO
SOLAR-CELLS
FABRICATION
SUBSTRATE
LAYERS
 
Description In this paper, we have demonstrated the dual role of boron doping in enhancing the device performance parameters as well as the device stability in low temperatures (200 degrees C) sol-gel processed ZnO thin film transistors (TFTs). Our studies suggest that boron is able to act as a carrier generator and oxygen vacancy suppressor simultaneously. Boron-doped ZnO TFTs with 8mol.% of boron concentration demonstrated field-effect mobility value of 1.2 cm(2) V-1 s(-1) and threshold voltage of 6.2 V, respectively. Further, these devices showed lower shift in threshold voltage during the hysteresis and bias stress measurements as compared to undoped ZnO TFTs. (C) 2015 AIP Publishing LLC.
 
Publisher AMER INST PHYSICS
 
Date 2016-01-15T07:50:20Z
2016-01-15T07:50:20Z
2015
 
Type Article
 
Identifier APPLIED PHYSICS LETTERS, 107(15)
0003-6951
1077-3118
http://dx.doi.org/10.1063/1.4933304
http://dspace.library.iitb.ac.in/jspui/handle/100/18093
 
Language en