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Impact of Varying Indium(x) Concentration and Quantum Confinement on PBTI Reliability in InxGa1-xAs FinFET

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Title Impact of Varying Indium(x) Concentration and Quantum Confinement on PBTI Reliability in InxGa1-xAs FinFET
 
Creator AGRAWAL, N
THATHACHARY, AV
MAHAPATRA, S
DATTA, S
 
Subject III-V FinFET
positive bias temperature instability (PBTI)
quantum well
time to failure (TTF)
 
Description In this letter, we present a comparative study of positive bias temperature instability (PBTI) reliability in InxGa1-xAs FinFET with varying Indium (x = 0.53, 0.70) percentage and quantization [bulk, quantum well (QW)]. Due to lower effective transport mass and higher injection velocity, In0.7Ga0.3As QW FinFET provides better performance than In0.53Ga0.47As bulk FinFET. However, stronger quantization lowers the effective barrier height between the carriers and defect density in the oxide causing degraded PBTI reliability in the former. Our preliminary PBTI stress study shows that In0.7Ga0.3As QW FinFETs may need to operate at a gate overdrive of 0.1 V (i.e., near threshold operation) to meet 10 years of reliability specifications at 85 degrees C.
 
Publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Date 2016-01-15T09:00:14Z
2016-01-15T09:00:14Z
2015
 
Type Article
 
Identifier IEEE ELECTRON DEVICE LETTERS, 36(2)120-122
0741-3106
1558-0563
http://dx.doi.org/10.1109/LED.2014.2385055
http://dspace.library.iitb.ac.in/jspui/handle/100/18223
 
Language en