ICAR Research Data Repository for Knowledge Management
Anomalous Width Dependence of Gate Current in High-K Metal Gate nMOS Transistors
DSpace at IIT Bombay
View Archive Info| Field | Value | |
| Title |
Anomalous Width Dependence of Gate Current in High-K Metal Gate nMOS Transistors
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| Creator |
DUHAN, P
GANERIWALA, MD RAO, VR MOHAPATRA, NR |
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| Subject |
DIELECTRICS
MOS transistor device scaling HKMG metal gate gate current trap assisted tunneling oxygen vacancies |
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| Description |
This letter analyzes the width dependence of gate current observed in nMOS transistors fabricated using the 28-nm gate-first CMOS process. It is experimentally shown that the gate current density is similar to 10x lower for 80-nm wide high permittivity (K) dielectrics and metal gate nMOS transistors compared with 1-mu m wider ones. The physical mechanism responsible for this anomalous width dependence is identified and attributed to the reduction in the average number of positively charged oxygen vacancies present in HfO2 for narrow width transistors.
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| Publisher |
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
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| Date |
2016-01-15T09:00:45Z
2016-01-15T09:00:45Z 2015 |
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| Type |
Article
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| Identifier |
IEEE ELECTRON DEVICE LETTERS, 36(8)739-741
0741-3106 1558-0563 http://dx.doi.org/10.1109/LED.2015.2440445 http://dspace.library.iitb.ac.in/jspui/handle/100/18224 |
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| Language |
en
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