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Improved Off-Current and Modeling in Sub-430 degrees C Si p-i-n Selector for Unipolar Resistive Random Access Memory

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Title Improved Off-Current and Modeling in Sub-430 degrees C Si p-i-n Selector for Unipolar Resistive Random Access Memory
 
Creator MANDAPATI, R
SHRIVASTAVA, S
SUSHAMA, S
SAHA, B
SCHULZE, J
GANGULY, U
 
Subject EPITAXY
DIODES
RRAM
Emerging memories
resistive random access memory
silicon epitaxy
selector device
 
Description Despite the excellent performance of silicon-based selector devices, high epitaxy temperature (T-epi > 700 degrees C) is the key constraint for Si selector technology compatibility with back-end-of-the-line (BEOL) process. Recently, we have demonstrated the high performance sub-430 degrees C epitaxial Si p-i-n selector. In this letter, we identify a two-step mechanism that affects the off-current (I-OFF) performance of low temperature epitaxial Si p-i-n diodes using molecular beam epitaxy (MBE). First, the Tepi dependent i-region encroachment by surface dopant segregation shows excellent agreement with the surface diffusion model and demonstrates its validity down to 400 degrees C. Second, the trap assisted tunneling model is used to evaluate the impact of the modified i-region thickness (due to surface dopant segregation) on I-OFF. Improved ideality factor (2x) and I-OFF performance (10(2) x) of sub-430 degrees C p-i-n diode is related to contamination control-a critical challenge in BEOL processing. Based on the experimentally validated model, we present the I-OFF dependence on the i-region thickness. We show that i-region thickness of 50 nm produces sufficiently low leakage, while higher i-region produces marginal I-OFF improvement. Thus, the low temperature epitaxial Si p-i-n junction technology is a promising step toward BEOL compatible Si selector technology.
 
Publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Date 2016-01-15T09:01:16Z
2016-01-15T09:01:16Z
2015
 
Type Article
 
Identifier IEEE ELECTRON DEVICE LETTERS, 36(12)1310-1313
0741-3106
1558-0563
http://dx.doi.org/10.1109/LED.2015.2491221
http://dspace.library.iitb.ac.in/jspui/handle/100/18225
 
Language en