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Random Dopant Fluctuation Induced Variability in Undoped Channel Si Gate All Around Nanowire n-MOSFET

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Title Random Dopant Fluctuation Induced Variability in Undoped Channel Si Gate All Around Nanowire n-MOSFET
 
Creator NAYAK, K
AGARWAL, S
BAJAJ, M
MURALI, KVRM
RAO, VR
 
Subject TRANSISTORS
CMOS
Characteristic fluctuations
CMOS
device performance
gate-all-around (GAA)
mismatch
random dopant fluctuations (RDFs)
silicon nanowire FET (NWFET)
variability
 
Description In this brief, the random dopant fluctuation (RDF)-induced threshold voltage (V-T) variability, ON current (I-ON) variability, and V-T mismatch in undoped channel Si gate-all-around (GAA) n-nanowire MOSFETs (n-NWFETs) are studied using coupled 3-D statistical device simulations considering quantum corrected room temperature drift-diffusion transport. The RDFs are introduced in the Si NWFET tetrahedral device grid by a 3-D atomistic Monte-Carlo technique. The RDF due to discrete random dopants located in the source (S)/drain (D) extension and channel regions of Si GAA n-NWFET are found to impact the device characteristic variability. The numerical V-T mismatch analysis and comparison with the Si n-NWFET total A(VT) measurement data from the literature reveal that RDF still plays a significant source for device random fluctuations in undoped channel Si GAA n-NWFETs. The numerical V-T mismatch study indicates the fact that complete suppression of RDF induced device random variability in undoped channel fully depleted MOS devices is still going to be a challenge, as long as doped S/D regions are employed.
 
Publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Date 2016-01-15T09:09:06Z
2016-01-15T09:09:06Z
2015
 
Type Article
 
Identifier IEEE TRANSACTIONS ON ELECTRON DEVICES, 62(2)685-688
0018-9383
1557-9646
http://dx.doi.org/10.1109/TED.2014.2383352
http://dspace.library.iitb.ac.in/jspui/handle/100/18238
 
Language en