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Part II: Design of Well Doping Profile for Improved Breakdown and Mixed-Signal Performance of STI-Type DePMOS Device

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Title Part II: Design of Well Doping Profile for Improved Breakdown and Mixed-Signal Performance of STI-Type DePMOS Device
 
Creator TAILOR, KH
SHRIVASTAVA, M
GOSSNER, H
BAGHINI, MS
RAO, VR
 
Subject Avalanche breakdown
drain extended MOSFET (DeMOS)
input-output (I/O)
mixed-signal performance
OFF-state breakdown voltage
ON-state resistance
two-stage breakdown
well doping profile
 
Description Shallow-trench isolation drain extended pMOS (STI-DePMOS) devices show a distinct two-stage breakdown. The impact of p-well and deep-n-well doping profile on breakdown characteristics is investigated based on TCAD simulations. Design guidelines for p-well and deep-n-well doping profile are developed to shift the onset of the first-stage breakdown to a higher drain voltage and to avoid vertical punch-through leading to early breakdown. An optimal ratio between the OFF-state breakdown voltage and the ON-state resistance could be obtained. Furthermore, the impact of p-well/deep-n-well doping profile on the figure of merits of analog and digital performance is studied. This paper aids in the design of STI drain extended MOSFET devices for widest safe operating area and optimal mixed-signal performance in advanced system-on-chip input-output process technologies.
 
Publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Date 2016-01-15T09:13:08Z
2016-01-15T09:13:08Z
2015
 
Type Article
 
Identifier IEEE TRANSACTIONS ON ELECTRON DEVICES, 62(12)4105-4113
0018-9383
1557-9646
http://dx.doi.org/10.1109/TED.2015.2488683
http://dspace.library.iitb.ac.in/jspui/handle/100/18246
 
Language en