Record Details

Enhancement in Peak Detectivity and Operating Temperature of Strain-Coupled InAs/GaAs Quantum Dot Infrared Photodetectors by Rapid Thermal Annealing

DSpace at IIT Bombay

View Archive Info
 
 
Field Value
 
Title Enhancement in Peak Detectivity and Operating Temperature of Strain-Coupled InAs/GaAs Quantum Dot Infrared Photodetectors by Rapid Thermal Annealing
 
Creator GHADI, H
SHETTY, S
ADHIKARY, S
BALGARKASHI, A
MANOHAR, A
CHAKRABARTI, S
 
Subject GAAS
WELL
Infrared detectors
photodetectors
photoluminescence
quantum dots
 
Description We report the effects of rapid thermal annealing on the optical, structural, and device properties of 30 layer strain-coupled InAs/GaAs quantum dot infrared photodetectors. Stability in the photoluminescence peak is observed for annealing up to 800 degrees C, which has not been previously reported. Cross-sectional transmission electron microscopy images show preservation of quantum dots is observed up to 800 degrees C. Device with total capping thickness of 150 nm annealed at 750 degrees C exhibit a fivefold enhancement in spectral intensity compared to as-grown devices and increase in the temperature of detector operation is observed from 100 to 140 K from the same device. The annealed devices exhibited a single-order enhancement in peak detectivity compared to as-grown quantum dot infrared photodetector.
 
Publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Date 2016-01-15T09:31:08Z
2016-01-15T09:31:08Z
2015
 
Type Article
 
Identifier IEEE TRANSACTIONS ON NANOTECHNOLOGY, 14(4)668-672
1536-125X
1941-0085
http://dx.doi.org/10.1109/TNANO.2015.2425433
http://dspace.library.iitb.ac.in/jspui/handle/100/18257
 
Language en