Record Details

A Fully On-Chip PT-Invariant Transconductor

DSpace at IIT Bombay

View Archive Info
 
 
Field Value
 
Title A Fully On-Chip PT-Invariant Transconductor
 
Creator AMARAVATI, A
DAVE, M
BAGHINI, MS
SHARMA, DK
 
Subject COMPENSATED CURRENT REFERENCE
TEMPERATURE
CIRCUIT
VOLTAGE
Process variations
proportional to absolute temperature (PTAT)
transconductance
 
Description This brief presents a novel process and temperature (PT)-invariant transconductor, fabricated and tested in 180-nm CMOS technology. It uses a novel bias circuit for implementing a PT-invariant transconductor using a MOSFET in triode region. Measurements show that the transconductance varies only by +/- 3.4% across 18 fabricated chips and over temperatures ranging from 25 degrees C to 100 degrees C. Simulations show that variation of the transconductance across process corners is +/- 6.7% and across temperature range of 0 degrees C to 100 degrees C is +/- 1.6%. The proposed PT-invariant transconductor has the minimum variation among the fully on-chip transconductors reported so far. The proposed circuit consumes 136 mu W of power.
 
Publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Date 2016-01-15T09:36:09Z
2016-01-15T09:36:09Z
2015
 
Type Article
 
Identifier IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 23(9)1961-1964
1063-8210
1557-9999
http://dx.doi.org/10.1109/TVLSI.2014.2347346
http://dspace.library.iitb.ac.in/jspui/handle/100/18267
 
Language en