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Atomic layer deposition of aluminum sulfide thin films using trimethylaluminum and hydrogen sulfide

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Title Atomic layer deposition of aluminum sulfide thin films using trimethylaluminum and hydrogen sulfide
 
Creator SINHA, S
MAHULI, N
SARKAR, SK
 
Subject BINARY REACTION SEQUENCE
SURFACE-CHEMISTRY
GROWTH
SPECTROSCOPY
H2O
 
Description Sequential exposures of trimethylaluminum and hydrogen sulfide are used to deposit aluminum sulfide thin films by atomic layer deposition (ALD) in the temperature ranging from 100 to 200 degrees C. Growth rate of 1.3 angstrom per ALD cycle is achieved by in-situ quartz crystal microbalance measurements. It is found that the growth rate per ALD cycle is highly dependent on the purging time between the two precursors. Increased purge time results in higher growth rate. Surface limited chemistry during each ALD half cycle is studied by in-situ Fourier transformed infrared vibration spectroscopy. Time of flight secondary ion-mass spectroscopy measurement is used to confirm elemental composition of the deposited films. (C) 2014 American Vacuum Society.
 
Publisher A V S AMER INST PHYSICS
 
Date 2016-01-15T09:46:40Z
2016-01-15T09:46:40Z
2015
 
Type Article
 
Identifier JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 33(1)
0734-2101
1520-8559
http://dx.doi.org/10.1116/1.4903951
http://dspace.library.iitb.ac.in/jspui/handle/100/18288
 
Language en