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Atomic layer deposition of titanium sulfide and its application in extremely thin absorber solar cells

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Title Atomic layer deposition of titanium sulfide and its application in extremely thin absorber solar cells
 
Creator MAHULI, N
SARKAR, SK
 
Subject CHEMICAL-VAPOR-DEPOSITION
ELECTRONIC-STRUCTURE
DISULFIDE NANOTUBES
HYDROGEN-STORAGE
PLASMA CVD
TIS2
FILMS
BATTERIES
MECHANISM
SPECTRA
 
Description Atomic layer deposition (ALD) of TiS2 is investigated with titanium tetrachloride and hydrogen sulfide precursors. In-situ quartz crystal microbalance and ex-situ x-ray reflectivity measurements are carried out to study self-limiting deposition chemistry and material growth characteristics. The saturated growth rate is found to be ca. 0.5 angstrom/cycle within the ALD temperature window of 125-200 degrees C. As grown material is found poorly crystalline. ALD grown TiS2 is applied as a photon harvesting material for solid state sensitized solar cells with TiO2 as electron transport medium. Initial results with Spiro-OMeTAD as hole conducting layer show ca. 0.6% energy conversion efficiency under 1 sun illumination. (C) 2014 American Vacuum Society.
 
Publisher A V S AMER INST PHYSICS
 
Date 2016-01-15T09:47:10Z
2016-01-15T09:47:10Z
2015
 
Type Article
 
Identifier JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 33(1)
0734-2101
1520-8559
http://dx.doi.org/10.1116/1.4904497
http://dspace.library.iitb.ac.in/jspui/handle/100/18289
 
Language en