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Contacts on n-type germanium using variably doped zinc oxide and highly doped indium tin oxide interfacial layers

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Title Contacts on n-type germanium using variably doped zinc oxide and highly doped indium tin oxide interfacial layers
 
Creator MANIK, PP
LODHA, S
 
Subject FERMI-LEVEL
 
Description The impact of varying interfacial layer (IL) doping on the performance of Ti/IL/n-Ge contacts is demonstrated using undoped ZnO, aluminumdoped ZnO (AZO), and O-vacancy-doped n(+)-ZnO ILs having similar conduction band offsets Delta E-c with respect to Ti and Ge. Diode and transfer length method measurements show Fermi-level unpinning for all the ILs; however, the contact resistance and its dependence on the IL thickness decrease with increasing IL doping owing to the reduction in the tunneling resistance. The contact resistivity depends on the IL doping (N-IL) as rho(c-n+)-ZnO < rho(c-AZO) < rho(c-ZnO) for Nn+-ZnO > N-Lambda ZO > N-ZnO. Contacts using a highly doped, low Delta E-c tin-doped In2O3 IL exhibit the lowest value, 1.4 x 10(-7) Omega.cm(2). (C) 2015 The Japan Society of Applied Physics
 
Publisher IOP PUBLISHING LTD
 
Date 2016-01-15T10:45:48Z
2016-01-15T10:45:48Z
2015
 
Type Article
 
Identifier APPLIED PHYSICS EXPRESS, 8(5)
1882-0778
1882-0786
http://dx.doi.org/10.7567/APEX.8.051302
http://dspace.library.iitb.ac.in/jspui/handle/100/18381
 
Language en