ICAR Research Data Repository for Knowledge Management
Modeling simulation and characterization of noise in inalas ingaas tied geometry double gate high electron mobility transistor for millimeter wave applications
Shodhganga@INFLIBNET
View Archive Info| Field | Value | |
| Title |
Modeling simulation and characterization of noise in inalas ingaas tied geometry double gate high electron mobility transistor for millimeter wave applications
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| Contributor |
Gupta, Mridula
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| Subject |
geometry double gate
Modeling simulation wave applications |
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| Description |
Available
Reference givan |
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| Date |
2015-02-24T07:29:28Z
2015-02-24T07:29:28Z 2015-02-24 n.d. 2013 n.d. |
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| Type |
Ph.D.
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| Identifier |
http://hdl.handle.net/10603/36153
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| Language |
English
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| Relation |
-
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| Rights |
university
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| Format |
341p.
- None |
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| Coverage |
Electronic science
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| Publisher |
New Delhi
University of Delhi Dept. of Electronic Science |
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| Source |
INFLIBNET
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