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dc Conductivity and dielectric properties of V₂O₅-Bi₂O₃-ZnO glass

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Title dc Conductivity and dielectric properties of V₂O₅-Bi₂O₃-ZnO glass
 
Creator Shukla, D K
Mollah, S
 
Subject Glass
dc Conductivity
Polaronic hopping models
Dielectric properties
V₂O₅-Bi₂O₃-ZnO
Semiconducting oxide glass
 
Description 52-56
Semiconducting oxide glass with composition 40 V₂O₅-40Bi₂O₃-20ZnO is prepared by rapid quenching method. The glassy phase is confirmed from X-ray diffraction (XRD) pattern which shows a broad hump around 2 = 30o. The dc conductivity of the glass has been measured in the temperature range 300 – 600 K and compared with that of other vanadium and copper based zinc oxide containing glasses. The dc conductivity is due to non-adiabatic small polaron hopping conduction which is confirmed from the fitting of the conductivity data with different polaronic hopping models. The frequency (75 kHz - 30 MHz) dependent dielectric constant of the glass decreases first and then increases with the increase of frequency at room temperature. The anomaly in frequency dependent dielectric constant at ~ 5 MHz may be due to the displacement and/or orientational motion of BiO₃ and BiO₆ structural units present in the glass.
 
Date 2008-10-22T08:53:18Z
2008-10-22T08:53:18Z
2007-01
 
Type Article
 
Identifier 0019-5596
http://hdl.handle.net/123456789/2273
 
Language en_US
 
Relation G01R
 
Publisher CSIR
 
Source IJPAP Vol.45(1) [January 2007]