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Temperature dependent analysis of refractive index, band gap and recombination coefficient in nitride semiconductor lasers

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Title Temperature dependent analysis of refractive index, band gap and recombination coefficient in nitride semiconductor lasers
 
Creator Gaikwad, S A
Samuel, E P
Patil, D S
Gautam, D K
 
Subject Recombination coefficient
Band gap
Refractive index
Nitrides
Semiconductor lasers
 
Description 238-242
Temperature dependent analysis of recombination coefficient, band gap and refractive index has been carried out to explore applicability of nitride lasers at higher temperatures. To estimate recombination coefficient at various temperatures Shockley-van Roosbroeck model has been used. Our results reveal that refractive index increases in linear manner with temperature and indium mole fraction in InGaN. However, refractive index was found to be decreasing with Al mole fraction and temperature in non-linear manner. The band gap deduced from our analysis was found to be increasing with Al mole fraction and decreasing with In mole fraction and therefore, these alloys provide better opportunity to form effective heterostructures with GaN. The recombination coefficient analysed, was observed to be decreasing non-linearly with band gap and temperature for AlGaN. However, in case of InGaN, the recombination coefficient shows linear increase with band gap and non-linear decrease with temperature.
 
Date 2008-10-30T11:28:10Z
2008-10-30T11:28:10Z
2007-03
 
Type Article
 
Identifier 0019-5596
http://hdl.handle.net/123456789/2315
 
Language en_US
 
Relation H01S 5/00
 
Publisher CSIR
 
Source IJPAP Vol.45(3) [March 2007]