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Piezoresistive effects of resonant tunneling structure for application in micro-sensors

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Title Piezoresistive effects of resonant tunneling structure for application in micro-sensors
 
Creator Zhang, Wendong
Xue, Chenyang
Xiong, Jijun
Xie, Bin
Wei, Tianjie
Chen, Yong
 
Subject Resonant tunneling
Piezoresistor
Double-barrier microstructure
Superlattice
 
Description 294-298
In this paper, piezoresistive properties of resonant tunneling structure made of undoped InGaAs/AlAs double-barrier quantum layers have been experimentally investigated, and the resonant tunneling structure was grown by molecular beam epitaxy (MBE) on semi-insulation (001)-oriented GaAs substrate. We found that the piezoresistivity of such quantum layers is about one order higher than that of the commonly used silicon structures. Micro accelerometers based on InGaAs/AlAs double-barrier resonant tunneling structures have also been designed and fabricated by control hole technique.
 
Date 2008-10-31T11:08:49Z
2008-10-31T11:08:49Z
2007-04
 
Type Article
 
Identifier 0019-5596
http://hdl.handle.net/123456789/2339
 
Language en_US
 
Relation B06B1/06; C30B
 
Publisher CSIR
 
Source IJPAP Vol.45(4) [April 2007]