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Measurement of novel micro bulk defects in semiconductive materials based on Mie scatter

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Field Value
 
Title Measurement of novel micro bulk defects in semiconductive materials based on Mie scatter
 
Creator Zheng, You
Yingpeng, Li
Jun, Chen
 
Subject Non-destructive detection
Semiconductive material
Micro bulk defect
Generalized Lorenz
Mie Theory (GLMT)
Near-infrared laser
Scattering
 
Description 372-376
This paper introduces a new micro bulk defects measurement method in semiconductive materials, which scales the defects by analyzing scattering light distribute based on Generalized Lorenz and Mie Theory (GLMT). A method named character recognition and pick up two characters as defect criterions have been presented. Moreover, a set of experimental apparatus is built to prove the detect method and defect criterions. The micro bulk defects in semiconductive materials have been detected experimentally.
 
Date 2008-10-31T11:01:26Z
2008-10-31T11:01:26Z
2007-04
 
Type Article
 
Identifier 0019-5596
http://hdl.handle.net/123456789/2334
 
Language en_US
 
Relation B81B7/02
 
Publisher CSIR
 
Source IJPAP Vol.45(4) [April 2007]