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Deposition of low stress polysilicon thin films using low-pressure chemical vapour deposition

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Title Deposition of low stress polysilicon thin films using low-pressure chemical vapour deposition
 
Creator Kumar, Mahesh
Parsad, Mahant
Goswami, Niranjana
Arora, Anil
Pant, B D
Dwivedi, V K
 
Subject Polysilicon thin films
Thin films
MEMS
Chemical vapour deposition
 
Description 400-402
The deposition of polysilicon thin films on silicon wafers using low-pressure chemical vapour deposition (LPCVD) was carried out and the process parameters were optimized to obtain normal and low stress films. The films of thickness 150 nm to 2 microns were deposited on 4" and 6" silicon wafers and the thickness uniformity was measured using Dektak 6M surface profiler. The thickness variation across the wafer was found to be in 5-10% range. Stress measurements were carried out using X-ray diffraction method. We were able to deposit low stress films with stress ~14 MPa. The quality of the films was found to be good and they were used in fabrication of MEMS based silicon devices.
 
Date 2008-10-31T11:12:27Z
2008-10-31T11:12:27Z
2007-04
 
Type Article
 
Identifier 0019-5596
http://hdl.handle.net/123456789/2343
 
Language en_US
 
Relation B81B7/02, C30B
 
Publisher CSIR
 
Source IJPAP Vol.45(4) [April 2007]