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Effect of substrate temperatures, deposition rate and heat treatment on structural and carrier transport mechanisms of thermal evaporated p-Cu₂S/n-CdS heterojunction

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Title Effect of substrate temperatures, deposition rate and heat treatment on structural and carrier transport mechanisms of thermal evaporated p-Cu₂S/n-CdS heterojunction
 
Creator Nahass, M M El
El-Barry, A M A
 
Subject Cu₂S/CdS heterojunction
Thin film
Ilumination
Space charge limited current
Photovoltaic characteristics
Spectral response
 
Description 465-475
The p-Cu₂S/n-CdS heterojunction (Hj) has been fabricated by vacuum deposition of p-Cu₂S thin film onto n-CdS thin film. CdS layer was evaporated at substrate temperature, Ts ≈ 473 K and rate of deposition ≈0.06 μm/min. The dark-temperature-current density-voltage (J-V-T) and illumination characteristics were measured over a reasonable temperature range (303-423K). The conduction mechanism was suggested to be thermo ionic for forward applied voltage < 0.2V. For higher voltage, the space charge limited current was the predominant mechanism. In the reverse direction, the generation and recombination mechanisms were the operating mechanisms. Finally, the photovoltaic characteristics and the spectral response of p-Cu₂S/n-CdS were also studied.
 
Date 2008-12-05T06:03:06Z
2008-12-05T06:03:06Z
2007-05
 
Type Article
 
Identifier 0019-5596
http://hdl.handle.net/123456789/2524
 
Language en_US
 
Relation H01L
 
Publisher CSIR
 
Source IJPAP Vol.45(5) [May 2007]