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Optical band gap of In₀․₁Bi₁․₉Te₃ thin films

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Title Optical band gap of In₀․₁Bi₁․₉Te₃ thin films
 
Creator Soni, P H
Bhavsar, S R
Pandya, G R
Desai, C F
 
Subject Absorbance
Band gap
Film thickness
Size effect
 
Description 806-808
Thin films (In₀․₁Bi₁․₉Te₃ ) were grown using the thermal evaporation technique on a (001) face of NaCl crystal as a substrate at room temperature. The optical absorption was measured in the wave number range 500-4000 cm⁻¹. From the optical absorption data, the band gap has been evaluated and studied as a function of the film thickness and deposition temperature. The band gap increases with decreasing thickness, a result normally associated with quantum size effect. The deposition temperature does not seem to affect the band gap as indicated by the results. The data indicate absorption through direct interband transition with a band gap around 0.14 eV.
 
Date 2008-12-15T06:49:39Z
2008-12-15T06:49:39Z
2008-11
 
Type Article
 
Identifier 0019-5596
http://hdl.handle.net/123456789/2577
 
Language en_US
 
Publisher CSIR
 
Source IJPAP Vol.46(11)) [November 2008]