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Electrical properties of thermally evaporated doped and undoped films of CdSe
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View Archive Info| Field | Value | |
| Title |
Electrical properties of thermally evaporated doped and undoped films of CdSe
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| Creator |
Borah, M N
Chaliha, S Sarmah, P C Rahman, A |
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| Subject |
Electrical properties
Activation energy Schottky barrier Cadmium selenide |
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| Description |
687-691
Electrical characteristics of Ag-doped and undoped films of CdSe have been reported. The activation energies at lower and elevated temperatures have been found to be 0.22 and 0.6eV, respectively. The Sn/CdSe junction exhibits Schottky bar-rier characteristics with diode ideality factor deviating from unity. Barrier height obtained from C-V plot and J-V plot are 0.8 and 0.72eV, respectively. The junction has been endowed with high series resistance. |
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| Date |
2008-12-19T10:51:20Z
2008-12-19T10:51:20Z 2007-08 |
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| Type |
Article
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| Identifier |
0019-5596
http://hdl.handle.net/123456789/2645 |
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| Language |
en_US
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| Relation |
H0L
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| Publisher |
CSIR
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| Source |
IJPAP Vol.45(8) [August 2007]
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