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Grain boundary scattering in silicon doped polycrystalline gallium nitride films prepared by rf sputtering
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View Archive Info| Field | Value | |
| Title |
Grain boundary scattering in silicon doped polycrystalline gallium nitride films prepared by rf sputtering
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| Creator |
Bhattacharyya, S R
Pal, A K |
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| Subject |
Group III nitrides
Grain boundary X-ray photoelectron spectroscopy FTIR |
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| Description |
125-133
Silicon doped polycrystalline gallium nitride films have been deposited at temperatures ranging from 300 to 623 K on fused silica and silicon substrates by radio frequency sputtering technique. The films are characterized by optical measurements while the microstructural information is obtained from scanning electron microscopy and atomic force microscopy. X-ray photoelectron spectroscopy studies indicate compositional information in these films. The bonding environment in the film has been revealed from Fourier transformed infrared studies. Grain boundary parameters like density of trap states and barrier height are also evaluated. |
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| Date |
2009-02-19T04:23:46Z
2009-02-19T04:23:46Z 2009-02 |
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| Type |
Article
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| Identifier |
0019-5596
http://hdl.handle.net/123456789/3185 |
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| Language |
en_US
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| Publisher |
CSIR
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| Source |
IJPAP Vol.47(2) [February 2009]
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